RN2609
RN2607~RN2609
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2607,RN2608,RN2609
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l plementary to RN1607~RN1609 Unit in mm
Equivalent Circuit and Bias Resistor Values
Type No. RN2607 RN2608 RN2609 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22
JEDEC EIAJ TOSHIBA Weight: 0.015g
― ― 2-3N1A
Eauivalent Circuit (Top View) Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage RN2607~RN2609 RN2607 Emitter-base voltage RN2608 RN2609 Collector current Collector power dissipation Junction temperature Storage temperature range IC P C- Tj Tstg VEBO Symbol VCBO VCEO Rating
- 50
- 50
- 6
- 7
- 15
- 100 300 150
- 55~150 m A m W °C °C V Unit V V
- Total rating
2001-06-05
RN2607~RN2609
Electrical Characteristics...
