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S5295B,S5295G,S5295J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
S5295B, S5295G, S5295J
High Speed Rectifier Applications (fast recovery)
Unit: mm Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: 1.5 µs Plastic Mold Type.
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Maximum Ratings
Characteristics S5295B Repetitive peak reverse voltage S5295G S5295J S5295B Reverse voltage (DC) S5295G S5295J Average forward current (Ta = 50°C) Peak one cycle surge forward current (non repetitive) Junction temparature Storage temparature range IF (AV) IFSM Tj Tstg VR VRRM Symbol Rating 100 400 600 75 300 500 0.5 30 (50 Hz) A 33 (60 Hz) -40 to 125 -40 to 125 °C °C A V V Unit
JEDEC JEITA TOSHIBA
DO-15 SC-39 3-3B1A
Weight: 0.42 g (typ.