SF3J48 Datasheet | Toshiba

.. SF3G48,SF3J48,USF3G48,USF3J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3G48,SF3J48,USF3G48,USF3J48 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off- State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On- State Current l Gate Trigger Current SF3G48- SF3J48 : IT (AV) = 3A : IGT = 10m A MAX. Unit: mm USF3G48- USF3J48 JEDEC JEITA TOSHIBA ― ― 13- 10J1B JEDEC JEITA TOSHIBA ― ― 13- 10J2B Weight: 1.7g MARKING - 1 MARK F3G48 F3J48 TYPE NAME SF3G48, USF3G48 SF3J48, USF3J48 - 2 2001-07-10 .. SF3G48,SF3J48,USF3G48,USF3J48 MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage and Repetitive Peak Reverse Voltage Non- Repetitive Peak Reverse Voltage (Non- Repetitive <5ms, Tj = 0~125°C) Average On- State Current R.M.S On- State Current Peak One Cycle Surge On- State Current (Non- Repetitive) I t Limit Value Critical Rate of Rise of On- State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range SYMBOL RATING 400 UNIT SF3G48 USF3G48 SF3J48 USF3J48 SF3G48 USF3G48 SF3J48 USF3J48 VDRM VRRM V 600 500 VRSM 720 IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 3 4.7 50 (50Hz) 55 (60Hz) 12.5 100 5 0.5 10 - 5 2 - 40~125 - 40~125 A A A A s A / µs W W V V A °C °C Note 1: VDRM = 0.5 × Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current and Repetitive Peak Reverse Current Peak On- State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non- Trigger Voltage Critical Rate of Rise of Off- State Voltage Holding Current Latching Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD dv / dt IH IL Rth (j- c) TEST CONDITION VDRM = VRRM = Rated ITM = 12A VD = 6V, RL = 10Ω VD = Rated × 2 / 3, Tc = 125°C VDRM = Rated, Tc = 125°C Exponential Rise VD = 6V, ITM = 1A VD =...