SH8G41 Datasheet | Toshiba

TOSHIBA HIGH- SPEED THYRISTOR SILICON PLANAR TYPE FOR AUTOMATIC- STROBE FLASHER APPLICATIONS - - - DISCHARGER (Chopper) l Type No. SH8G41 is Designed for a Small Package Device Having Shorted Turn- Off Time and Low Turn- On Loss at High Current. l Repetitive Peak Off- State Voltage and Peak Reverse Voltage : VDRM = VRRM = 400V Unit: mm .. l Repetitive Peak Surge On- State Current : ITRM = 350A l Critical Rate of Rise of On- State Current : di/dt = 100A/µs l Plastic Mold Package MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State and Reverse Voltage Non- Repetitive Peak Reverse Voltage (Note 1) Repetitive Peak Surge On- State Current (Note 2) Critical Rate of Rise of On- State Current (Note 3) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Current Junction Temperature Storage Temperature Range SYMBOL VDRM VRRM VRSM ITRM di /dt PGM PG (AV) IGM Tj Tstg RATING 400 450 350 100 5 0.5 2 - 40~125 - 40~125 UNIT V V A A / µs W W A °C °C JEDEC JEITA TOSHIBA Weight: 2.0g TO- 220AB ― 13- 10G1B Note 1: Note 2: Note 3: Non - Rep. < 5ms, Tj = 0~125°C CM = 1000µF i G = 100m A tgw = 10µs tgr ≤ 250ns 2001-07-10 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State and Reverse Current Peak On- State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non- Trigger Voltage Holding Current mutating Capacitor .. Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD IH Cc Rth (j- a) TEST CONDITION VDRM = VRRM = 400V ITM = 25A VD = 6V, RL = 10Ω VD = 200V, Ta = 125°C RL = 100Ω CM = 1000µF, VCM = 350V, ITM = 230A LM = 50µH, VGR = - 6V Junction to Ambient MIN ― ― ― ― 0.2 ― ― ― MAX 250 2.3 1.5 50 ― 150 2.7 90 UNIT µA V V m A V m A µF °C / W MARKING NUMBER - 1 TYPE SYMBOL SH8G41 MARK SH8G41 - 2 Example 8A : January 1998 8B : February 1998 8L : December 1998 2001-07-10 .. 2001-07-10 .. 2001-07-10 .. RESTRICTIONS ON PRODUCT USE 000707EAA - TOSHIBA is continually working to improve the...