SM12J45A Datasheet | Toshiba

SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off- State Voltage : VDRM = 400, 600V l R.M.S On- State Current l High mutating (dv / dt) : IT (RMS) = 12A MAXIMUM RATINGS CHARACTERISTIC SM12G45 SM12G45A SM12J45 SM12J45A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg UNIT Repetitive Peak Off- State Voltage R.M.S On- State Current (Full Sine Waveform Tc = 98°C) Peak One Cycle Surge On- State Current (Non- Repetitive) I t Limit Value (t = 1~10ms) Critical Rate of Rise of On- State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 12 120 (50Hz) 132 (60Hz) 72 50 5 0.5 10 2 - 40~125 - 40~125 A A A s A / µs W W V A °C °C JEDEC JEITA TOSHIBA Weight: 2.0g TO- 220AB ― 13- 10G1A 2001-07-13 SM12G45,SM12J45,SM12G45A,SM12J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I SM12G45 SM12J45 Gate Trigger Voltage SM12G45A SM12J45A II III IV I II III IV I SM12G45 SM12J45 Gate Trigger Current SM12G45A SM12J45A II III IV I II III IV Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off- State Voltage at mutation SM12G45 SM12J45 SM12G45A SM12J45A VTM VGD IH Rth (j- c) ITM = 17A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = 400V (di / dt) c = - 6.5A / ms IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM=Rated, Tj = 125°C T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (- ) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (- ) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (- ) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (- ) , Gate (+) MIN ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― 0.2 ― ― 10 4 TYP. ― ―...