SM1G43 Datasheet | Toshiba

SM1G43,SM1J43 TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM1G43,SM1J43 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off- State Voltage : VDRM = 400, 600V l R.M.S On- State Current l Higt mutating (dv / dt) : IT (RMS) = 1A Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage SM1G43 SM1J43 SYMBOL VDRM IT (RMS) ITSM I t PGM PG (AV) VGM IGM Tj Tstg RATING 400 600 1.0 8 (50Hz) 8.8 (60Hz) 0.32 1 0.1 6 0.5 - 40~125 - 40~125 UNIT V A A A s W W V A °C °C R.M.S On- State Current (Full Sine Waveform Tc = 74°C) Peak One Cycle Surge On- State Current (Non-Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range JEDEC JEITA TOSHIBA Weight: 0.2g TO- 92 SC- 43 13- 5A1E 2001-07-10 SM1G43,SM1J43 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III IV I Gate Trigger Current II III IV Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance Thermal Resistance VTM VGD IH Rth (j- c) Rth (j- a) ITM = 1.5A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC Junction to Ambient, AC IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (- ) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (- ) , Gate (+) MIN ― ― ― ― ― ― ― ― ― ― 0.2 ― ― ― TYP. ― ― ― ― 2 ― ― ― 10 ― ― ― ― ― MAX 10 2 2 2 ― 5 5 5 ― 1.5 ― 10 40 180 V V m A °C / W °C / W m A V UNIT µA MARKING NUMBER - 1 TYPE SYMBOL SM1G43 SM1J43 MARK M1G43 M1J43 - 2 Example 8A : January 1998 8B : February 1998 8L : December 1998 2001-07-10 SM1G43,SM1J43 2001-07-10 SM1G43,SM1J43 2001-07-10 SM1G43,SM1J43 RESTRICTIONS ON PRODUCT USE 000707EAA - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in...