SM1L43 Datasheet | Toshiba

.. TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS l Repetitive Peak Off- State Voltage : VDRM = 800V l R.M.S. On- State Current : IT (RMS) = 1A Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage R.M.S. On- State Current (Full Sine Waveform Tc = 74°C) Peak One Cycle Surge On- State Current (Non- Repetitive) I t Limit Value (t = 1~10ms) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range SYMBOL VDRM IT (RMS) ITSM I t PGM PG (AV) VGM IGM Tj Tstg RATING 800 1.0 8 (50Hz) 8.8 (60Hz) 0.32 1 0.1 6 0.5 - 40~125 - 40~125 UNIT V A A A s W W V A °C °C JEDEC JEITA TOSHIBA Weight: 0.2g TO- 92 SC- 43 13- 5A1E 2001-07-10 .. ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance Thermal Resistance VTM VGD IH Rth (j- c) Rth (j- a) ITM = 1.5A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC Junction to Ambient, AC IGT VD = 12V, RL = 20Ω VGT V D =12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = 800V T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) MIN ― ― ― ― ― ― ― ― 0.2 ― ― ― TYP. ― ― ― ― ― ― ― ― ― ― ― ― MAX 10 1.5 1.5 1.5 10 10 10 1.5 ― 10 40 180 V V m A °C / W °C / W m A V UNIT µA MARKING NUMBER - 1 TYPE SYMBOL SM1L43 MARK M1L43 - 2 Example 8A : January 1998 8B : February 1998 8L : December 1998 2001-07-10 .. 2001-07-10 .. 2001-07-10 .. RESTRICTIONS ON PRODUCT USE 000707EAA - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It...