SM2G54 Datasheet | Toshiba

SM2G54,SM2L54 TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2G54,SM2L54 AC POWER CONTROL APPLICATIONS Repetitive Peak Off- State Voltage : VDRM = 800V R.M.S. On- State Current High mutation (dv / dt) : IT (RMS) = 2A : (dv / dt) c = 5V / µs (Min.) Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage R.M.S. On- State Current (Full Sine Waveform) Peak One Cycle Surge On- State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On- State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg RATING 800 2 8 (50Hz) 8.8 (60Hz) 0.32 50 3 0.3 10 1.6 - 40~125 - 40~125 UNIT V A A A s A / µs W W V A °C °C 1 : T1 2 : T2 3 : GATE JEDEC JEITA TOSHIBA Weight: 0.82g - - - Note: di / dt test condition VDRM = 400V, ITM ≤ 3A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 2004-07-15 SM2G54,SM2L54 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off- State Voltage Critical Rate of Rise of Off- State Voltage at munication VTM VGD IH Rth (j- a) dv / dt (dv / dt) c ITM = 3A VD = 800V, Tc = 125°C VD = 12V, ITM = 1A Junction to Ambient, AC VDRM = 800V, Tj = 125°C Exponential Rise VDRM = 400V, Tj = 80°C (di / dt) c = - 0.5A / ms IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = 800V T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) MIN - - - - - - - - 0.2 - - 50 5 TYP. - - - - - - - - - - - - - MAX 20 1.5 1.5 1.5 10 10 10 2.0 - 10 83 - - V V m A °C / W V / µs V / µs m A V UNIT...