SM2JZ47A Datasheet | Toshiba

.. SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A AC POWER CONTROL APPLICATIONS l IT (RMS) = 1A (Ta = 65°C without radiator) l Gate Trigger Current l R.M.S On- State Current l Isolation Voltage : IGT = 5m A Max. (TYPE “A”) : IT (RMS) = 2A (Tc = 110°C) : VISOL = 1500V (AC, t = 60s) l Repetitive Peak Off- State Voltage : VDRM = 400V, 600V Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage and Repetitive Peak Reverse Voltage R.M.S On- State Current (Full Sine Waveform) SM2GZ47 SM2GZ47A SM2JZ47 SM2JZ47A Tc = 110°C Ta = 65°C SYMBOL RATING 400 VDRM 600 IT (RMS) 2 1 8 (50Hz) 8.8 (60Hz) 0.32 3 0.3 10 1.6 - 40~125 - 40~125 1500 A V UNIT Peak One Cycle Surge On- State Current (Non- Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) ITSM I t PGM PG (AV) VFGM IGM Tj Tstg VISOL A A s W W V A °C °C V JEDEC ― JEITA ― TOSHIBA 13- 10H1A Weight: 1.7g (Typ.) MARKING NUMBER - 1 - 2 SYMBOL SM2GZ47, SM2GZ47A TYPE SM2JZ47, SM2JZ47A SM2GZ47A, SM2JZ47A MARK M2GZ47 M2JZ47 A - 3 Example 8A : January 1998 8B : February 1998 8L : December 1998 2001-07-10 .. SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III IV I SM2GZ47 SM2JZ47 Gate Trigger Current SM2GZ47A SM2JZ47A II III IV I II III IV Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance VTM VGD IH Rth (j- a) ITM = 3A VD = Rated, Tc = 125°C RL = 100Ω Junction to Ambient, AC IGT VD = 12V RL = 20Ω VGT VD = 12V RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (- ) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (- ) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- )...