SM2LZ47 Datasheet | Toshiba

TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS l Repetitive Peak Off- State Voltage : VDRM = 800V l R.M.S. On- State Current l High mutation (dv / dt) l Isolation Voltage : IT (RMS) = 2A : (dv / dt) c = 5V / µs (Min.) : VISOL = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage R.M.S. On- State Current (Full Sine Waveform) Peak One Cycle Surge On- State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On- State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg VISOL RATING 800 2 8 (50Hz) 8.8 (60Hz) 0.32 50 3 0.3 10 1.6 - 40~125 - 40~125 1500 UNIT V A A A s A / µs W W V A °C °C V JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13- 10H1A Note: di / dt test condition VDRM = 400V, ITM ≤ 3A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 2001-07-10 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off- State Voltage Critical Rate of Rise of Off- State Voltage at munication VTM VGD IH Rth (j- a) dv / dt (dv / dt) c ITM = 3A VD = 800V, Tc = 125°C VD = 12V, ITM = 1A Junction to Ambient, AC VDRM = 800V, Tj = 125°C Exponential Rise VDRM = 400V, Tj = 125°C (di / dt) c = - 0.5A / ms IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = 800V T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) MIN ― ― ― ― ― ― ― ― 0.2 ― ― ― 5 TYP. ― ― ― ― ― ― ― ― ― ― ― 500 ― MAX 20 1.5 1.5 1.5 10 10 10 2.0 ― 10 58 ― ― V V m A °C / W V / µs V / µs m A V UNIT µA MARKING NUMBER - 1 - 2 SYMBOL Toshiba Product...