SM8GZ47 Datasheet | Toshiba

SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off- State Voltage l R.M.S ON- State Current l High mutating (dv / dt) l Isolation Voltage : VISOL = 1500V AC : VDRM = 400, 600V : IT (RMS) = 8A Unit: mm MAXIMUM RATINGS CHARACTERISTIC SM8GZ47 SM8GZ47A SM8JZ47 SM8JZ47A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg VISOL UNIT Repetitive Peak Off- State Voltage R.M.S On- State Current (Full Sine Waveform Tc = 83°C) Peak One Cycle Surge On-State Current (Non- Repetitive) I t Limit Value Critical Rate of Rise of On- State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 8 80 (50Hz) 88 (60Hz) 32 50 5 0.5 10 2 - 40~125 - 40~125 1500 A A A s A / µs W W V A °C °C V JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13- 10H1A Note 1: di / dt Test Condition VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns i GP = IGT×2.0 2001-07-13 SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III IV I SM8GZ47 SM8JZ47 Gate Trigger Current SM8GZ47A SM8JZ47A II III IV I II III IV Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off- State Voltage Critical Rate of Rise of Off- State Voltage at mutation SM8GZ47 SM8JZ47 SM8GZ47A SM8JZ47A SM8GZ47 SM8JZ47 SM8GZ47A SM8JZ47A VTM VGD IH Rth (j- c) ITM = 12A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = Rated, Tj = 125°C Exponential Rise IGT VD = 12V RL = 20Ω VGT VD = 12V RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+), Gate (+) T2 (+), Gate (- ) T2 (- ), Gate (- ) T2 (- ), Gate (+) T2 (+), Gate (+) T2 (+), Gate (- ) T2 (- ), Gate (- ) T2 (- ), Gate (+) T2 (+), Gate (+)...