SM8LZ47 Datasheet | Toshiba

TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS l Repetitive Peak Off- State Voltage l R.M.S ON- State Current l High mutating (dv / dt) l Isolation Voltage : VDRM = 800V : IT(RMS) = 8A : (dv / dt) c = 10V / µs (Min.) : VISOL = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage R.M.S On- State Current (Full Sine Waveform) Peak One Cycle Surge On-State Current (Non- Repetitive) I t Limit Value Critical Rate of Rise of On- State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) SYMBOL VDRM IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg VISOL RATING 800 8 70 (50Hz) 80 (60Hz) 24.5 50 5 0.5 10 2 - 40~125 - 40~125 1500 UNIT V A A A s A / µs W W V A °C °C V JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13- 10H1A Note: di / dt test condition VDRM = 400V, ITM≤12A, tgw≥10µs, tgr≤250ns, igp = IGT×2.0 2001-07-13 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off State Voltage Critical Rate of Rise of Off State Voltage at mutation VTM VGD IH Rth (j- c) dv / dt ITM = 12A VD = 800V, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = 800V, Tj = 125°C Exponential Rise VDRM = 400V, Tj = 125°C (di / dt) c = - 4.5A / ms IGT VD = 12V RL = 20Ω VGT VD = 12V RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = 800V T2 (+), Gate (+) T2 (+), Gate (- ) T2 (- ), Gate (- ) T2 (+), Gate (+) T2 (+), Gate (- ) T2 (- ), Gate (- ) MIN ― ― ― ― ― ― ― ― 0.2 ― ― ― TYP. ― ― ― ― ― ― ― ― ― ― ― 300 MAX 20 1.5 1.5 1.5 30 30 30 1.5 ― 50 3.6 ― V V m A °C / W V / µs m A V UNIT µA (dv / dt) c ― ― V / µs MARKING NUMBER - 1 - 2 SYMBOL TOSHIBA PRODUCT MARK TYPE...