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SSM3J14T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM3J14T
Power Management Switch DC-DC Converters
• Suitable for high-density mounting due to compact package • Low on Resistance: Ron = 145 mΩ (max) (@VGS = −4.5 V)
: Ron = 85 mΩ (max) (@VGS = −10 V) • High-speed switching
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
−2.7
IDP
A −5.4
(Note 2)
Drain power dissipation
PD t = 10 s
1.25
W
(Note 1)
0.7
JEDEC
―
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-3S1A
Note:
Using continuously under heavy loads (e.g. the application of
Weight: 10 mg (typ.
SSM3J14T Datasheet
