SSM3J317T Overview
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8-V drive Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V).