SSM3J46CTB Datasheet | Toshiba

SSM3J46CTB .. TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) ○ Power Management Switch Applications - - 0.8±0.05 Unit: mm B A +0.02 0.48 -0.03 1.5 V drive Low ON-resistance:Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V) Ron = 133 mΩ (max) (@VGS = -2.5 V) Ron = 103 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -2.0 -4.0 1000 150 - 55 to 150 Unit V V A m W °C °C CST3B BOTTOM VIEW 0.45 0.25±0.03 1 2 0.04 M A B 0.05±0.03 0.25±0.03 0.05±0.03 1.2±0.05 0.65±0.03 0.2±0.02 0.65 0.70±0.03 0.04 M A 1. Gate 2. Source 3. Drain Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1T1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 1.5 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking (top view) Pin Condition (top view) Equivalent Circuit Polarity mark 3 2 Polarity mark 1. Gate (on the top) 2. Source 3. Drain - Electrodes: on the bottom 2009-09-28 SSM3J46CTB .. Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol Test Conditions...