TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
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SSM3K03FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K03FE
High Speed Switching Applications Analog Switch Applications
· · · · 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 -55~150 Unit V V mA mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-2HA1B
Weight: 2.3 mg (typ.
SSM3K03FE Datasheet
