The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM3K302T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K302T
Power Management Switch Applications High Speed Switching Applications
• • • 1.8 V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8V) Ron = Ron = 87mΩ (max) (@VGS = 2.5V) 71 mΩ (max) (@VGS = 4.0V) Unit: mm
Absolute www.DataSheet4U.com
Maximum Ratings (Ta = 25°C)
Characteristic Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ± 12 3.0 6.0 700 150 −55~150 Unit V V A mW °C °C
Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.
SSM3K302T Datasheet
