SSM3K329R
SSM3K329R is Silicon N-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-Channel MOS
1. Applications
- Power Management Switches
- High-Speed Switching
2. Features
(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)
3. Packaging and Internal Circuit
SOT-23F
1: Gate 2: Source 3: Drain
©2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2010-02
2021-10-22 Rev.1.0
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