SSM5P05FU Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications - - - Small package Low on resistance : Ron = 3.3 Ω (max) (@VGS = - 4 V) : Ron = 4.0 Ω (max) (@VGS = - 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±12 -200 -400 300 150 -55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-2L1B Note1: Total rating, mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6...