SSM6K211FE Description
SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ) SSM6K211FE ○ High-Speed Switching Applications ○ Power Management Switch Applications 1.5-V drive Low ON-resistance: Ron = 118 mΩ (max) (@VGS = 1.5 V) Ron = 82 mΩ (max) (@VGS = 1.8 V) Ron = 59 mΩ (max) (@VGS = 2.5 V) Ron = 47 mΩ (max) (@VGS = 4.5 V) Unit: Source Storage temperature Tstg −55 to 150 °C JEDEC ― Note:Using continuously under...