SSM6K24FE Description
SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.5 V) Ron = 180mΩ (max) (@VGS = 2.5 V) Unit: Using continuously under heavy loads (e.g.