SSM6K25FE
SSM6K25FE is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
High Speed Switching Applications
- Optimum for high-density mounting in small packages
- Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V)
Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm 1.6±0.05 1.2±0.05
0.2±0.05
1.6±0.05 1.0±0.05 0.5 0.5
Characteristics
Symbol
Rating
Unit
0.12±0.05
0.55±0.05
Drain-Source voltage
Gate-Source voltage
VGSS
± 12
Drain current
DC Pulse
Drain power dissipation
Channel temperature
500 m W
(Note 1)
Tch
°C
1,2,5,6 :Drain 3 :Gate 4 :Source
Storage temperature...
