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SSM6P35FE - P-Channel MOSFET

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SSM6P35FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FE ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) 1.6±0.05 1.0±0.05 0.5 0.5 1.6±0.05 1.2±0.05 Unit: mm 1 6 2 5 3 4 0.2±0.05 Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2) 0.12±0.05 0.55±0.05 Characteristics Symbol Rating Unit Drain–source voltage VDSS -20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP -100 mA -200 Drain power dissipation PD(Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C ES6 1.Source1 4.Source2 2.
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