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TA2145AF - 3V STEREO GEADPHONE AMPLIFIER

Features

  • Built-in preamplifier Input coupling condenser-less Built-in input capacitor for reducing buzz noise Low noise: Vni = 1.2 µVrms (typ. ) Preamplifier on/off switch.
  • Built-in power amplifier OCL (Output condenser-less) Voltage gain: GV = 31 dB (typ. ).
  • Built-in motor governor (Current proportion type) Built-in DC volume control function ATT = 82dB (Ta = 25°C, typ. ) Built-in bass boost function Low supply current (VCC = 3 V, f = 1 kHz, PRE OUT = 100 mVrms, Ta = 25°C.

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Datasheet Details

Part number TA2145AF
Manufacturer Toshiba Semiconductor
File Size 292.97 KB
Description 3V STEREO GEADPHONE AMPLIFIER
Datasheet download datasheet TA2145AF Datasheet
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Full PDF Text Transcription

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TA2145AF TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2145AF 3 V Stereo Headphone Amplifier (3 V USE) The TA2145AF is developed for play-back stereo headphone equipments (3 V USE). It is built in dual preamplifiers, dual OCL power amplifiers, motor governor, DC volume control and preamplifier on/off switch etc. Features · Built-in preamplifier Input coupling condenser-less Built-in input capacitor for reducing buzz noise Low noise: Vni = 1.2 µVrms (typ.) Preamplifier on/off switch. · Built-in power amplifier OCL (Output condenser-less) Voltage gain: GV = 31 dB (typ.) · · · · Built-in motor governor (Current proportion type) Built-in DC volume control function ATT = 82dB (Ta = 25°C, typ.
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