TC5117400BSJ-60 - DRAM

Product Overview

Toshiba Semiconductor

Datasheet Details

Part number	TC5117400BSJ-60
Manufacturer	Toshiba Semiconductor
File Size	1.10 MB
Description	DRAM
Datasheet	TC5117400BSJ-60 Datasheet
Note	This datasheet PDF includes multiple part numbers: TC5117400BSJ-60, TC5117400BSJ. Please refer to the document for exact specifications by model.
Additional preview pages of the TC5117400BSJ-60 datasheet.

Product details

Description

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits.

The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Features

include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features.
4,194,304 word by 4 bit organization.
Fast access time and cycle time.
Single power supply of 5V± 10% with a built-in VBB generator.
L.

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Other Datasheets by Toshiba Semiconductor

TC5117400BSJ-70 - DRAM
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Published: Jan 17, 2017 |