TC5117400BST-70
Overview
The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.
- 4,194,304 word by 4 bit organization
- Fast access time and cycle time
- Single power supply of 5V± 10% with a built-in VBB generator
