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TC55257APL-12 - STATIC RAM

Download the TC55257APL-12 datasheet PDF. This datasheet also covers the TC55257AP-10 variant, as both devices belong to the same static ram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • with a maximum operating current of 5mA/rnIz and minimum cycle time of 100nsi l20ns. Hhen CE is a logic.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55257AP-10-ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1fOSH~lBA MOS MEMORY PRODUCT 32,768 WORD X 8 BIT CMOS STATIC RAM SILICON GATE CMOS PRELIMINARY TC55257AP-l O/APL-l O/AP-12/APL-12 TC55257A~10/AF~10/A~12/AF~12 [QfSCR I PTI ON I The TC55257AP is 262,144 bit static random access memory organized as 32,768 words by 8 bits usIng OIOS technology, and operated trom a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/rnIz and minimum cycle time of 100nsi l20ns. Hhen CE is a logic