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TC55257BFL - SILICON GATE CMOS STATIC RAM

General Description

The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply.

Key Features

  • with an operating current of 5mNMHz fup. ) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 10Q. lA. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257BPL is suitable for use in microprocessor systems where high speed, low power, and battery backup are required. The TC5525.

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Datasheet Details

Part number TC55257BFL
Manufacturer Toshiba
File Size 224.98 KB
Description SILICON GATE CMOS STATIC RAM
Datasheet download datasheet TC55257BFL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA TC55257BPL/BFL/BSPL/BFIL/BIRL-85/10 SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 10Q.lA. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access.