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TC554161AFTI-10L - STATIC RAM

Download the TC554161AFTI-10L datasheet PDF. This datasheet also covers the TC554161AFTI variant, as both devices belong to the same static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC554161AFTI_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
TC554161FTL-10 SILICON GATE CMOS STATIC RAM Toshiba
TC554161FTL-10L SILICON GATE CMOS STATIC RAM Toshiba
TC554161FTL-70 SILICON GATE CMOS STATIC RAM Toshiba
TC554161FTL-70L SILICON GATE CMOS STATIC RAM Toshiba
TC554161FTL-85 SILICON GATE CMOS STATIC RAM Toshiba

Other Datasheets by Toshiba

Part Number Description
TC554161AFTI-10 STATIC RAM
TC554161AFTI-70 STATIC RAM
TC554161AFTI-70L STATIC RAM
TC554161AFTI-85 STATIC RAM
TC554161AFTI-85L STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2 mA standby current (typ) when chip enable ( CE ) is asserted high. There are two control inputs. CE is used to select the device and for data retention control, and output enable ( OE ) provides fast memory access.