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TC554161AFTI-85 - STATIC RAM

This page provides the datasheet information for the TC554161AFTI-85, a member of the TC554161AFTI STATIC RAM family.

Datasheet Summary

Description

The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits.

Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.

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Datasheet preview – TC554161AFTI-85

Datasheet Details

Part number TC554161AFTI-85
Manufacturer Toshiba Semiconductor
File Size 142.37 KB
Description STATIC RAM
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Full PDF Text Transcription

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TC554161AFTI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns. It is automatically placed in low-power mode at 2 mA standby current (typ) when chip enable ( CE ) is asserted high. There are two control inputs. CE is used to select the device and for data retention control, and output enable ( OE ) provides fast memory access.
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