Datasheet4U Logo Datasheet4U.com

TC55V16256JI-12 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

This page provides the datasheet information for the TC55V16256JI-12, a member of the TC55V16256FTI-12 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS family.

Datasheet Summary

Description

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply.

Features

  • Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values) Cycle Time Operation (max) 12 230 15 200 20 170 25 150 ns mA.
  • Standby:10 mA (both devices) Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Data byte control usin.

📥 Download Datasheet

Datasheet preview – TC55V16256JI-12

Datasheet Details

Part number TC55V16256JI-12
Manufacturer Toshiba Semiconductor
File Size 223.48 KB
Description MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet download datasheet TC55V16256JI-12 Datasheet
Additional preview pages of the TC55V16256JI-12 datasheet.
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide lower and upper byte access. This device is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible.
Published: |