| Part number | TC55VBM316AFTN |
|---|---|
| Datasheet | TC55VBM316AFTN_ToshibaSemiconductor.pdf |
| File Size | 258.28 KB |
| Manufacturer | Toshiba |
| Description | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
|
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable ( CE1 ) is asserted high or...
| Part Number | Description |
|---|---|
| TC55V16100FT-10 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |
| TC55V16100FT-12 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |
| TC55V16100FT-15 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |
| TC55V16100FTI-12 | MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS |
| TC55V16100FTI-15 | MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS |
| TC55V16256FT-12 | 16-BIT CMOS STATIC RAM |
| TC55V16256FT-15 | 16-BIT CMOS STATIC RAM |
| TC55V16256FTI-12 | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55V16256FTI-15 | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55V16256J-12 | 16-BIT CMOS STATIC RAM |
