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TC55VZM216AFTN10 - 16-BIT CMOS STATIC RAM

This page provides the datasheet information for the TC55VZM216AFTN10, a member of the TC55VZM216AJJN 16-BIT CMOS STATIC RAM family.

Datasheet Summary

Description

The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply.

Features

  • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns Low-power dissipation (IDDO2) (the following are maximum values) Cycle Time Operation (max) 8 140 10 130 12 120 ns mA.
  • Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Data byte control usi.

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Datasheet preview – TC55VZM216AFTN10

Datasheet Details

Part number TC55VZM216AFTN10
Manufacturer Toshiba Semiconductor
File Size 208.86 KB
Description 16-BIT CMOS STATIC RAM
Datasheet download datasheet TC55VZM216AFTN10 Datasheet
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Full PDF Text Transcription

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TC55VZM216AJJN/AFTN08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide lower and upper byte access. This device is well suited to cache memory applications where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible.
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