Datasheet4U Logo Datasheet4U.com

TC581282AXB - 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM

General Description

The TC581282A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks.

Key Features

  • Organization Memory cell allay 528 × 32K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control.
  • Power supply VCC = 2.7 V to 3.6 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ) 10 mA typ.

📥 Download Datasheet

Datasheet Details

Part number TC581282AXB
Manufacturer Toshiba
File Size 554.62 KB
Description 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
Datasheet download datasheet TC581282AXB Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TC582562AXB CMOS NAND EPROM Toshiba
TC58256AFTI CMOS NAND EPROM Toshiba
TC58256FT CMOS NAND EPROM Toshiba
TC58256FTI CMOS NAND EPROM Toshiba
TC58257AF (TC58257AP/AF) Erasable and Programmable ROM Toshiba

Other Datasheets by Toshiba

Part Number Description
TC58128FT 128M-Bit CMOS NAND EPROM
TC58128FTI 128M-Bit CMOS NAND EPROM
TC5816BDC 16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
TC5816BFT 16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM
TC58256AFT 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com TC581282AXB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TENTATIVE 128-MBIT (16M × 8 BITS) CMOS NAND E PROM DESCRIPTION The TC581282A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages). The TC581282A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.