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TC58FVT641 - (TC58Fxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

This page provides the datasheet information for the TC58FVT641, a member of the TC58FVT641-10 (TC58Fxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS family.

Product Overview

Toshiba Semiconductor

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TC58FVT641 (TC58Fxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS by Toshiba Semiconductor - Datasheet Preview — Datasheet preview – TC58FVT641

Datasheet Details

Part number	TC58FVT641
Manufacturer	Toshiba Semiconductor
File Size	603.53 KB
Description	(TC58Fxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TC58FVT641 Datasheet
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TC58FVT641 Product details

Description

The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits.

Features

commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

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Other Datasheets by Toshiba Semiconductor

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Published: Nov 17, 2005 |