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TC58FVT641 Datasheet

(tc58fxxx) Toshiba Mos Digital Integrated Circuit Silicon Gate CMOS

Manufacturer: Toshiba

This datasheet includes multiple variants, all published together in a single manufacturer document.

TC58FVT641 Overview

The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The.

TC58FVT641 Key Features

  • Power supply voltage VDD = 2.7 V~3.6 V Operating temperature Ta = -40°C~85°C Organization 8M × 8 bits / 4M × 16 bits Fun
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devic
  • The TOSHIBA products listed in this document are intended for usage in general electronics

More Datasheets from Toshiba

See all Toshiba datasheets

Part Number Description
TC58FVT004 4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVT160 16-MBIT CMOS FLASH MIMORY
TC58FVT160A SILICON GATE CMOS
TC58FVT321 SILICON GATE CMOS
TC58FVT400 4-MBIT CMOS FLASH MEMORY
TC58FVT800 (TC58Fxxx) 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
TC58FV321 (TC58Fxxx) 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
TC58FVB160A SILICON GATE CMOS
TC58FVB400 4-MBIT CMOS FLASH MEMORY
TC58F1001F-10 131072 WORD x 8 BIT CMOS FLASH E2PROM

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