TC58V64BDC Datasheet 64M-Bit CMOS NAND EPROM

Manufacturer: Toshiba

TC58V64BDC 64m-bit cmos nand eprom by Toshiba - Datasheet Preview

Datasheet Details

Part number	TC58V64BDC
Manufacturer	Toshiba
File Size	345.04 KB
Description	64M-Bit CMOS NAND EPROM
Datasheet	TC58V64BDC Datasheet

General Description

) The TC58V64B is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 16 pages ´ 1024 blocks.

The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.

The Erase operation is implemented in a single block unit (8 Kbytes + 256 bytes: 528 bytes ´ 16 pages).

Overview

TC58V64BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 64-MBIT (8M ´ 8 BITS) CMOS NAND E PROM (8M BYTE.

Key Features

Organization Memory cell array 528 ´ 16K ´ 8 Register 528 ´ 8 Page size 528 bytes Block size (8K + 256) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and Data Format Specification issued by the SSFDC Forum.
Power supply VCC = 3.3 V ± 0.3 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array-register 25 ms max Serial Read c.

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