TC7SZ125AFE - CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba

Key Features

High output drive: ±24 mA (min) ＠VCC = 3 V Super high speed operation: tpd 2.6 ns (typ. ) ＠VCC = 5 V, 50pF Operation voltage range: VCC (opr) = 1.8~5.5 V Latch-up performance: ±500 mA or more ESD performance: ±200 V or more (JEITA) ±2000 V or more (MIL) Power down protection is provided on all inputs and outputs. Matches the performance of TC74LCX series when operated at 3.3 V VCC. Weight: 0.003 g (typ. ) Marking Type name Pin Assignment (top view) G 1.

TC7SZ125AFE cmos digital integrated circuit silicon monolithic by Toshiba - Datasheet Preview

Datasheet Details

Part number	TC7SZ125AFE
Manufacturer	Toshiba
File Size	169.27 KB
Description	CMOS Digital Integrated Circuit Silicon Monolithic
Datasheet	TC7SZ125AFE Datasheet

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TC7SZ125AFE www.DataSheet4U.com TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ125AFE Dual Bus Buffer 3-State Output Features · · · · · · · High output drive: ±24 mA (min) ＠VCC = 3 V Super high speed operation: tpd 2.6 ns (typ.) ＠VCC = 5 V, 50pF Operation voltage range: VCC (opr) = 1.8~5.5 V Latch-up performance: ±500 mA or more ESD performance: ±200 V or more (JEITA) ±2000 V or more (MIL) Power down protection is provided on all inputs and outputs. Matches the performance of TC74LCX series when operated at 3.3 V VCC. Weight: 0.003 g (typ.