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TG2006F - 1.9 GHz Band Power Amplifier

Datasheet Summary

Features

  • l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ. ) l Small package: SM8 package (2.9 × 2.8 × 1.1mm) l Low cost: Can be achieved minimum function. Pin Assignment (top view) Marking TG2006F Weight: 0.02 g (typ. ) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Supply voltage VDD1 VDD2 5 5 Gate voltage VGG 1 Input power Pi 10 Power dissipation Pd (Note1) 250 Operating temperature range Topr.
  • 40~85 Storage temperatu.

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Datasheet Details

Part number TG2006F
Manufacturer Toshiba Semiconductor
File Size 174.34 KB
Description 1.9 GHz Band Power Amplifier
Datasheet download datasheet TG2006F Datasheet
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TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2006F 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Features l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ.) l Small package: SM8 package (2.9 × 2.8 × 1.1mm) l Low cost: Can be achieved minimum function. Pin Assignment (top view) Marking TG2006F Weight: 0.02 g (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Supply voltage VDD1 VDD2 5 5 Gate voltage VGG 1 Input power Pi 10 Power dissipation Pd (Note1) 250 Operating temperature range Topr −40~85 Storage temperature range Tstg −55~150 Note 1: When mounted on 2.5 cm2 × 1.6 t glass epoxy board.
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