TH50VSF3582AASB Datasheet PDF - Toshiba Semiconductor MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Specs

TH50VSF3582AASB - MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

Datasheet Summary

Description

The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory.

The CIOS and CIOF inputs can be used to select the optimal memory configuration.

The power supply.

Features

Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www. DataSheet4U. com.
Data retention supply voltage VCCs = 1.5 V~3.3 V.
Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH).
Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes.
Organization.
CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 2,097,152 words of 16 bits 2,097,152 words of 16 bits 4,194,.

Datasheet Details

Part number	TH50VSF3582AASB
Manufacturer	Toshiba Semiconductor
File Size	611.07 KB
Description	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TH50VSF3582AASB Datasheet
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Full PDF Text Transcription

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TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. The TH50VSF3582/3583AASB can range from 2.67 V to 3.3 V. The TH50VSF3582/3583AASB is available in a 69-pin BGA package, making it suitable for a variety of design applications. FEATURES Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com • Data retention supply voltage VCCs = 1.

Published: Oct 29, 2008 |