TH50VSF3582AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Datasheet

TH50VSF3582AASB Key Features

Data retention supply voltage VCCs = 1.5 V~3.3 V
Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximu
Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes
Organization
PIN ASSIGNMENT (TOP VIEW)
Case: CIOF = VCC, CIOS = VCC (×16, ×16)
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devic

Part Number	Description
TH50VSF3583AASB	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
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TH50VSF2581AASB	SRAM AND FLASH MEMORY MIXED MULTI-CHIP