TIM1011-8L Description
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA.
TIM1011-8L Key Features
- LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level
- HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
- HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz
- BROAD BAND INTERNALLY MATCHED FET
- HERMETICALLY SEALED PACKAGE
- P1dB) X Rth(c-c)