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TIM1011-8L

Manufacturer: Toshiba

TIM1011-8L datasheet by Toshiba.

TIM1011-8L datasheet preview

TIM1011-8L Datasheet Details

Part number	TIM1011-8L
Datasheet	TIM1011-8L_ToshibaSemiconductor.pdf
File Size	169.27 KB
Manufacturer	Toshiba
Description	MICROWAVE POWER GaAs FET

TIM1011-8L Overview

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA.

TIM1011-8L Key Features

LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level
HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
P1dB) X Rth(c-c)

TIM1011-8UL from other manufacturers

View TIM1011-8UL datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	TIM1011-8UL	MICROWAVE POWER GaAs FET	Toshiba

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