TIM1414-7 Datasheet | Toshiba

Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1d B= 38.5d Bm at 14.0GHz to 14.5GHz ･HIGH GAIN G1d B= 6.5d B at 14.0GHz to 14.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER Ga As FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current SYMBOL CONDITIONS P1d B G1d B IDS VDS= 9V IDSset= 2.0A f= 14.0 to 14.5GHz UNIT d Bm d B Power Added Efficiency add % Channel Temperature Rise Tch (VDS X IDS + Pin - P1d B) X Rth(c-c) °C Remended Gate Resistance(Rg): 100  MIN. 37.5 5.5    TYP. MAX.   2.25...