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TIM1414-7 - MICROWAVE POWER GaAs FET

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Features

  • ･BROAD BAND.

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Datasheet Details

Part number TIM1414-7
Manufacturer Toshiba Semiconductor
File Size 328.89 KB
Description MICROWAVE POWER GaAs FET
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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 38.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.5dB at 14.0GHz to 14.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-7 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS VDS= 9V IDSset= 2.0A f= 14.0 to 14.5GHz UNIT dBm dB A Power Added Efficiency add % Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN. 37.5 5.5    TYP. MAX. 38.5  6.5  2.25 2.
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