TIM4450-60SL - LOW INTERMODULATION DISTORTION

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T LOW.

TIM4450-60SL LOW INTERMODULATION DISTORTION by Toshiba Semiconductor - Datasheet Preview — Datasheet preview – TIM4450-60SL

Datasheet Details

Part number	TIM4450-60SL
Manufacturer	Toshiba Electronic Devices & Storage
File Size	108.35 KB
Description	LOW INTERMODULATION DISTORTION
Datasheet	TIM4450-60SL Datasheet
Additional preview pages of the TIM4450-60SL datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-60SL TECHNICAL DATA FEATURES T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz T HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN. 47.0 8.5    -42   TYP. MAX. 48.0  9.5 13.2  42 -45    15.0 ±0.8   11.8 100 CHARACTERISTICS SYMBOL CONDITIONS Output Power at 1dB Gain P1dB Compression Point Power Gain at 1dB Gain G1dB VDS= 10V Compression Point f = 4.4 to 5.0GHz IDSset≅9.

Published: Dec 20, 2006 |