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TIM5964-16UL - MICROWAVE POWER GaAs FET

Features

  • ŋBROAD BAND.

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Datasheet Details

Part number TIM5964-16UL
Manufacturer Toshiba
File Size 302.52 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM5964-16UL Datasheet
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MICROWAVE POWER GaAs FET TIM5964-16UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 31.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 3.6A f= 5.9 to 6.4GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 31.
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