TJ20A10M3
TJ20A10M3 is Field Effect Transistor manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
Swiching Regulator Applications
- Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 50 S (typ.)
- Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 100 V)
- Enhancement-model: Vth =
- 2.0 to
- 4.0 V (VDS =
- 10 V, ID =
- 1 m A)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
- 100
Drain-gate voltage (RGS = 20 kΩ)
VDGR
- 100
Gate-source voltage
VGSS ±20 V
Drain current
DC (Note 1) Pulse (Note 1)
ID IDP
- 20 A
- 40
Drain power dissipation (Tc = 25°C)
35 W
Single pulse avalanche energy (Note 2)
Avalanche current
EAS IAR
124 m...
