TJ40S04M3L - MOSFETs

Datasheet Summary

Features

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche ene.

Toshiba Semiconductor

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Datasheet Details

Part number	TJ40S04M3L
Manufacturer	Toshiba Semiconductor
File Size	235.98 KB
Description	MOSFETs
Datasheet	TJ40S04M3L Datasheet
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TJ40S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ40S04M3L 1. Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.0 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4.

Published: Sep 5, 2014 |