TJ50S06M3L - P-Channel MOSFET

Datasheet Summary

Features

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 10.3 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ50S06M3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2011-03 2020-06-24 Rev.7.0 TJ50S06M3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless.

Toshiba Semiconductor

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Datasheet Details

Part number	TJ50S06M3L
Manufacturer	Toshiba Semiconductor
File Size	254.25 KB
Description	P-Channel MOSFET
Datasheet	TJ50S06M3L Datasheet
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MOSFETs Silicon P-Channel MOS (U-MOS) TJ50S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 10.3 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ50S06M3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2011-03 2020-06-24 Rev.7.0 TJ50S06M3L 4.

Published: Sep 5, 2014 |