The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK07H90A
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV)
TK07H90A
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 1.6Ω (typ.)
z High forward transfer admittance : |Yfs| =5.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720V)
z Enhancement mode
: Vth = 2.0~4.
TK07H90A Datasheet
