Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS IV)
Switching Regulator Applications
Unit: mm z Low drain- source ON resistance : RDS (ON) = 1.6Ω (typ.) z High forward transfer admittance : |Yfs| =5.0 S (typ.) z Low leakage current
: IDSS = 100 μA (max) (VDS = 720V) z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1...