Datasheet4U Logo Datasheet4U.com

TK100A08N1 Datasheet MOSFETs

Manufacturer: Toshiba

Overview: TK100A08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A08N1 1. Applications • Switching Voltage Regulators 2.

Key Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalan.

More Datasheets from Toshiba

Part Number Description
TK100A06N1 MOSFETs
TK100E06N1 Silicon N-Channel MOSFET
TK100E08N1 Silicon N-Channel MOSFET
TK100E10N1 Silicon N-Channel MOSFET
TK100F04K3L MOSFETs
TK100S04N1L Silicon N-Channel MOSFET
TK10A55D N-Channel MOSFET
TK10A60E MOSFETs
TK10A60W Silicon N-Channel MOSFET
TK10A60W5 Silicon N-Channel MOSFET

TK100A08N1 Distributor