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TK100S04N1L - Silicon N-Channel MOSFET

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Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK100S04N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2013-01 2020-06-24 Rev.7.0 TK100S04N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unles.

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Datasheet Details

Part number TK100S04N1L
Manufacturer Toshiba Semiconductor
File Size 279.82 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-channel MOS (U-MOS-H) TK100S04N1L 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK100S04N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2013-01 2020-06-24 Rev.7.0 TK100S04N1L 4.
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