TK100S04N1L
Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 m A)
3. Packaging and Internal Circuit
DPAK+
1: Gate 2: Drain (heatsink) 3: Source
©2016-2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2013-01
2020-06-24 Rev.7.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1)
Power dissipation
(Tc = 25)
(Note 2)
Single-pulse avalanche energy
(Note 3)
114 m J
Single-pulse avalanche current
(Note 3)
Channel temperature
(Note...
