• Part: TK10J80E
  • Description: Silicon N-Channel MOSFET
  • Manufacturer: Toshiba
  • Size: 226.43 KB
Download TK10J80E Datasheet PDF
TK10J80E page 2
Page 2
TK10J80E page 3
Page 3

Datasheet Summary

MOSFETs Silicon N-Channel MOS (π-MOS) 1. Applications - Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of mercial production 2013-08 2014-02-28 Rev.4.0 4....